NVMdurance “Flash Memory Device and Control Method” patent granted in China.

NVMdurance, with its unique approach to extending the endurance of flash devices, has announced that patent number ZL 20`0 8 0052625.2; NVMD-002CN developed by Joe Sullivan and Conor Ryan, both of Limerick, Ireland, has been granted in China for “A Flash Memory Device and Control Method. Read more here...